Optical and electrical characterizations of 4H-SiC-oxide interfaces by spectroscopic ellipsometry and capacitance-voltage measurementsHASHIMOTO, Hideki; HIJIKATA, Yasuto; YAGUCHI, Hiroyuki et al.Applied surface science. 2009, Vol 255, Num 20, pp 8648-8653, issn 0169-4332, 6 p.Article

High resolution X-ray photoelectron spectroscopy study on initial oxidation of 4H-SiC(0001)-√3 x √3}R30° surfaceTAKAHASHI, Shin; HATTA, Shinichiro; YOSHIGOE, Akitaka et al.Surface science. 2009, Vol 603, Num 1, pp 221-225, issn 0039-6028, 5 p.Article

Nitridation of the SiO₂/4H-SiC interface studied by surface-enhanced Raman spectroscopyCHOI, S. H; WANG, D; WILLIAMS, J. R et al.Applied surface science. 2007, Vol 253, Num 12, pp 5411-5414, issn 0169-4332, 4 p.Article

Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substratesLIN DONG; GUOSHENG SUN; JUN YU et al.Applied surface science. 2013, Vol 270, pp 301-306, issn 0169-4332, 6 p.Article

Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiCLEE, Kung-Yen; CHANG, Yu-Hao; HUANG, Yan-Hao et al.Applied surface science. 2013, Vol 282, pp 126-132, issn 0169-4332, 7 p.Article

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopyKIM, Hong-Yeol; KIM, Jihyun; FREITAS, Jaime A et al.Applied surface science. 2013, Vol 270, pp 44-48, issn 0169-4332, 5 p.Article

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(1 120)BISHOP, S. M; REYNOLDS, C. L; MOLSTAD, J. C et al.Applied surface science. 2009, Vol 255, Num 13-14, pp 6535-6539, issn 0169-4332, 5 p.Article

Recent advances on dielectrics technology for SiC and GaN power devicesROCCAFORTE, F; FIORENZA, P; GRECO, G et al.Applied surface science. 2014, Vol 301, pp 9-18, issn 0169-4332, 10 p.Conference Paper

Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO₂ interfaceLIU ZHENG; GUOSHENG SUN; LIXIN TIAN et al.Applied surface science. 2013, Vol 280, pp 500-503, issn 0169-4332, 4 p.Article

Thermal conductivity evaluation of GaN―AlN―(4H)SiC hetero-epitaxial material systemBOSE, Sri. K.Solid state communications. 2013, Vol 159, pp 102-105, issn 0038-1098, 4 p.Article

Experimental determination of impact ionization coefficients in 4H-SiCNGUYEN, D. M; RAYNAUD, C; DHEILLY, N et al.Diamond and related materials. 2011, Vol 20, Num 3, pp 395-397, issn 0925-9635, 3 p.Article

Characterization of major in-grown stacking faults in 4H-SiC epilayersGAN FENG; SUDA, Jun; KIMOTO, Tsunenobu et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4745-4748, issn 0921-4526, 4 p.Conference Paper

Advanced High-Voltage 4H-SiC Schottky Rectifiers : Silicon carbide devices and technologyLIN ZHU; CHOW, T. Paul.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 1871-1874, issn 0018-9383, 4 p.Article

Catalyst-referred etching of 4H-SiC substrate utilizing hydroxyl radicals generated from hydrogen peroxide moleculesYAGI, Keita; MURATA, Junji; KUBOTA, Akihisa et al.Surface and interface analysis. 2008, Vol 40, Num 6-7, pp 998-1001, issn 0142-2421, 4 p.Conference Paper

Interfacial studies of Al₂O₃ deposited on 4H-SiC(0001)DIPLAS, Spyros; AVICE, Marc; THOGERSEN, Annett et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 822-825, issn 0142-2421, 4 p.Conference Paper

Photoluminescence and electroluminescence imaging of carrot defect in 4H-SiC epitaxyLIU, Kendrick X; STAHLBUSH, Robert E; TWIGG, Mark E et al.Journal of electronic materials. 2007, Vol 36, Num 4, pp 297-306, issn 0361-5235, 10 p.Article

Surface analyses of Zr (film)/4H-SiC (substrate) by synchrotron radiation induced-PEEMKAMEZAWA, C; HIRAI, M; KUSAKA, M et al.Applied surface science. 2004, Vol 237, Num 1-4, pp 611-615, issn 0169-4332, 5 p.Conference Paper

High-purity semi-insulating 4H-SiC for microwave device applicationsJENNY, J. R; MALTA, D. P; MÜLLER, St. G et al.Journal of electronic materials. 2003, Vol 32, Num 5, pp 432-436, issn 0361-5235, 5 p.Article

Annealing study of a bistable defect in proton-implanted n-type 4H-SiCNIELSEN, H. Kortegaard; MARTIN, D. M; LEVEQUE, P et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 743-747, issn 0921-4526, 5 p.Conference Paper

Role of carbon in the formation of ohmic contact in Ni/4H—SiC and Ni/Ti/4H—SiCSIAD, M; ABDESSLAM, M; CHAMI, A. C et al.Applied surface science. 2012, Vol 258, Num 18, pp 6819-6822, issn 0169-4332, 4 p.Article

4H-silicon carbide thin junction based ultraviolet photodetectorsBIONDO, S; LAZAR, M; OTTAVIANI, L et al.Thin solid films. 2012, Vol 522, pp 17-19, issn 0040-6090, 3 p.Conference Paper

High Voltage (3130 V) 4H-SiC Lateral p-n Diodes on a Semiinsulating SubstrateHUANG, Chih-Fang; KUO, Jin-Rong; TSAI, Chih-Chung et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 83-85, issn 0741-3106, 3 p.Article

Interface study of transition metal (Fe, Zr) on 4H-SiC(0001)Si face : photoemission electron microscopy and soft X-ray fluorescence spectroscopyHIRAI, M; KAMEZAWA, C; AZATYAN, S et al.Applied surface science. 2005, Vol 249, Num 1-4, pp 362-366, issn 0169-4332, 5 p.Article

Lattice location studies of rare earth impurities in 3C-, 4H- and 6H-SiCVETTER, U; HOFSÄSS, H; WAHL, U et al.Diamond and related materials. 2003, Vol 12, Num 10-11, pp 1883-1886, issn 0925-9635, 4 p.Article

Step bunching fabrication constraints in silicon carbidePHELPS, G. J; WRIGHT, N. G; CHESTER, E. G et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp L17-L21, issn 0268-1242Article